Dr. Pepen Arifin

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Undergraduate Degree, Institut Teknologi Bandung, 1987
Doctoral Degree, Macquarie University, Sydney, Australia, 1997

Elementary Physics, Mechanics, Modern Physics, Thermodynamics (Compulsory), Electronic Material Physics (Elective)

1. Saripudin, A., Saragih, H., Khairurrijal, Winata, T., Arifin, P.,"Effect of growth temperature on cobalt-doped TiO2 thin films deposited on Si(100) substrate by MOCVD technique", Advanced Materials Research, p. 192, 2014

2. Saehana, S., Yuliza, E., Arifin, P., Khairurrijal, Abdullah, M.,"Dye-sensitized solar cells (DSSC) from black rice and its performance improvement by depositing interconnected copper (copper bridge) into the space between TiO2 nanoparticles", Materials Science Forum, p. 43 , 2013

3. Saehana, S., Arifin, P., Khairurrijal, Abdullah, M.,"A new architecture for solar cells involving a metal bridge deposited between active TiO 2 particles", Journal of Applied Physics, p. 12, 2012

4. Saehana, S., Prasetyowati, R., Hidayat, M.I., Arifin, P., Khairurrijal, Abdullah, M.,"Performance improvement of TiO2 based solar cells by coating Cu nanoparticles into the space between TiO2", AIP Conference Proceedings, p. 163, 2011.

5. Ramelan, A.H., Arifin, P., Goldys, E.,"Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium", International Journal of Materials Research, p. 1403, 2011

6. Ramelan, A.H., Goldys, E.M., Arifin, P.,"Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method", Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, p. 183, 2010.

7. Ramelan, A.H., Arifin, P., Goldys, E.,"GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)", ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, p. 84, 2010.

8. Ramelan, A.H., Harjana, H., Arifin, P.,"Growth of AlGaSb compound semiconductors on GaAs substrate by metalorganic chemical vapour deposition", Advances in Materials Science and Engineering, art. no. 923409, 2010

9. Arsyad, F.S., Arifin, P., Barmawi, M., Budiman, M., Sukirno, Supu, A.,"Growth of AlxGa1-xN epitaxial thin film on sapphire substrate by plasma assisted metal organic chemical vapor deposition (PA-MOCVD)", IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, p. 64, 2010

10. Mulyanti, B., Arifin, P.,"Plasma-assisted MOCVD growth of GaMnN", IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, p. 56, 2010

11. Hamidah, I., Suhandi, A., Setiawan, A., Arifin, P.,"High mobility and high N concentration of GaNxAs1-x thin films grown by metal organic chemical vapor deposition", 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, art. no. 4781475, 2008

12. Subagio, A., Sutanto, H., Supriyanto, E., Budiman, M., Arifin, P., Sukirno, Barmawi, M.,"Study of Mg-doped GaN thin films grown on c-plane sapphire substrate by plasma assisted metalorganic chemical vapor deposition method", AIP Conference Proceedings, p. 224, 2008

13. Sutanto, H., Subagio, A., Supriyanto, E., Arifin, P., Budiman, M., Sukirno, Barmawi, M.,"Microstructure and optical properties of AlxGa 1-xN/GaN heterostructure thin films grown on Si(111) substrate by plasma assisted metalorganic chemical vapor deposition method, AIP Conference Proceedings, p. 134", 2008

14. Supriyanto, E., Sutanto, H., Subagio, A., Saragih, H., Budiman, M., Arifin, P., Sukirno, Barmawi, M.,"Effect of Co-doping on microstructural, crystal structure and optical properties of Ti1-xCoxO2 thin films deposited on Si substrate by MOCVD method”, AIP Conference Proceedings, p. 237, 2008

1. Study of injection and transport of electron spin in TiO2:Co/TiO2/ TiO2:Co structure, ITB Innovation Research, 2012.

2. AlGaN/GaN Heterostructure Field Effect Transistor, Riset Unggulan Terpadu (RUT) XII, 2007