Research activities in this Research Division cover the growth and characterization of electronic materials, theoretical and numerical study on electronic materials properties and application of electronic materials for electronic and opto-electronic devices. The research area consists of four main interests: amorphous semiconductor, compound semiconductor, superconductor and oxide, and theoretical and simulation. Study on amorphous semiconductor focuses on the growth and characterization of amorphous silicon and its application on electronic and optoelectronic devices such as solar cell, thin film transistor, LED and colour sensor. Study on compound semiconductor focuses on III-IV compound semiconductor such semiconductor based on gallium nitride, and antimony. Study on superconductor and oxide focuses on the investigation of superconductor materials, ferroelectric, and pyroelectric; especially on thin film superconductor with high critical temperature, i.e. YBCO, NBCO, HgSnBCCO, and its application in electronic devices. The last, study on theoretical and simulation is focused on the investigation of electronic materials properties through theoretical analysis and via simulation.
This research division is supported by the following research laboratories: MOCVD, PECVD, PLD, Sputtering, Synthesis and Functionalization of Nano materials, Material Characterization, Material Computation, and Energy and Environmental Materials.
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